FDC6333C【PDF 2/8 页】MOSFET N-CH/P-CHAN 30V SSOT6

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Electrical Characteristics

T A = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max Units

Off Characteristics

BV DSS

? BV DSS

? T J

I DSS

Drain–Source Breakdown Voltage

Breakdown Voltage Temperature

Coefficient

Zero Gate Voltage Drain Current

V GS = 0 V, I D = 250 μ A

V GS = 0 V, I D = –250 μ A

I D = 250 μ A,Ref. to 25 ° C

I D = –250 μ A,Ref. to 25 ° C

V DS = 24 V, V GS = 0 V

V DS = –24 V, V GS = 0 V

Q1

Q2

Q1

Q2

Q1

Q2

30

–30

27

–22

1

–1

V

mV/ ° C

μ A

I GSSF

Gate–Body Leakage, Forward

V GS = 16 V,

V GS = 25 V,

V DS = 0 V

V DS = 0 V

Q1

Q2

100

100

nA

I GSSR

Gate–Body Leakage, Reverse

V GS = –16 V, V DS = 0 V

V GS = –25 V, V DS = 0 V

Q1

Q2

–100

–100

nA

On Characteristics

(Note 2)

V GS(th)

Gate Threshold Voltage

Q1

V DS = V GS , I D = 250 μ A

1

1.8

3

V

Q2

V DS = V GS , I D = –250 μ A

–1

–1.8

–3

? V GS(th)

? T J

Gate Threshold Voltage

Temperature Coefficient

Q1

Q2

I D = 250 μ A,Ref. To 25 ° C

I D = –250 μ A,Ref. to 25 ° C

4

–4

mV/ ° C

R DS(on)

Static Drain–Source

Q1

V GS = 10 V,

I D = 2.5 A

73

95

m ?

On–Resistance

Q2

V GS = 4.5 V, I D = 2.0 A

V GS = 10 V, I D = 2.5 A,T J =125 ° C

V GS = –10 V, I D = –2.0 A

V GS =– 4.5 V, I D = –1.7 A

V GS = 10 V, I D = –2.0 A,T J =125 ° C

90

106

95

142

149

150

148

130

220

216

I D(on)

On–State Drain Current

Q1

V GS = 10 V,

V DS = 5 V

8

A

Q2

V GS = –10 V, V DS = –5 V

–8

g FS

Forward Transconductance

Q1

V DS = 5 V

I D = 2.5 A

7

S

Q2

V DS = –5 V

I D = –2.0A

3

Dynamic Characteristics

C iss

Input Capacitance

Q1

V DS =15 V, V GS = 0 V, f=1.0MHz

282

pF

Q2

V DS =–15 V, V GS = 0 V, f=1.0MHz

185

C oss

Output Capacitance

Q1

V DS =15 V, V GS = 0 V, f=1.0MHz

49

pF

Q2

V DS =–15 V, V GS = 0 V, f=1.0MHz

56

C rss

Reverse Transfer Capacitance Q1

Q2

V DS =15 V, V GS = 0 V, f=1.0MHz

V DS =–15 V, V GS = 0 V, f=1.0MHz

20

26

pF

Switching Characteristics

(Note 2)

t d(on)

Turn–On Delay Time

Q1

For Q1 :

4.5

9

ns

t r

Turn–On Rise Time

Q2

Q1

V DS =15 V,

V GS = 10 V,

I DS = 1 A

R GEN = 6 ?

4.5

6

9

12

ns

Q2

For Q2 :

13

23

t d(off)

t f

Turn–Off Delay Time

Turn–Off Fall Time

Q1

Q2

Q1

V DS =–15 V,

V GS = –10 V,

I DS = –1 A

R GEN = 6 ?

19

11

1.5

34

20

3

ns

ns

Q2

2

4

Q g

Total Gate Charge

Q1

For Q1 :

4.7

6.6

nC

Q gs

Q gd

Gate–Source Charge

Gate–Drain Charge

Q2

Q1

Q2

Q1

V DS =15 V,

V GS = 10 V,

For Q2 :

V DS =–15 V,

V GS = –10 V,

I DS = 2.5 A

R GEN = 6 ?

I DS = –2.0 A

4.1

0.9

0.8

0.6

5.7

nC

nC

Q2

0.4

FDC6333C Rev C (W)

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